DFT simulation on the temperature-dependent electronic transition of V (Nb or Ta) substituted NiMn2O4

Hai-long Li,Liang Bian,Aiming Chang,Ji-Kang Jian,Wen-ping Hou,Lei Gao,Xiao-yan Zhang,Lei Wang,Wei Ren,Mianxin Song,Fa-qin Dong
DOI: https://doi.org/10.1142/S0217984916502481
2016-01-01
Modern Physics Letters B
Abstract:Previously, we reported that the d p (Mn-3d-O-2p) orbital hybridization induces Mn valence change (Mn3+ -> MO4+) in the octahedron. The electron transfer mechanism can be controlled by modifying the Mn-3d orbital in the octahedron. Here, we used the density functional theory (DFT) with generalized gradient approximation (GGA) and two-dimensional correlation analysis (2D-CA) techniques to calculate the electron transfer mechanism of the V (Nb or Ta) substituted NiMn2O4 (NMO) in the temperature range of 50-1500 K. The results show that the heat accumulation accelerates the O-2p(4) orbital splitting, inducing charge disproportionation. The V-3d(3) substituted Mn increases the intensity and of the partial density of state (PDOS) at conduction band (1-3 eV), this enhances the V-3d(3) O-2p(4) p d sigma* orbital. The Nb-4d(3)/Ta-5d(3) substituted Mn reduces the intensity of the PDOS at conduction band (1-5 eV), this weakens the Nb-4d(3)/Ta-5d(3)-O-2p(4) p d sigma* orbital. This study effectively analyzes the microscopic changes of the electron transfer caused by the heat accumulation, provides a theoretical basis for the design of NMO-based negative temperature coefficient (NTC) thermistors.
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