Effect of Rapid Magnetic Field Annealing in Vacuum on the Structure and Magnetic Properties of Ni-P Films

Haiqin Li,Jing Yuan,Duolu Mao,Yulong Xie,Yuanliang Ma
DOI: https://doi.org/10.1080/10584587.2016.1165979
2016-01-01
Integrated Ferroelectrics
Abstract:Ni-P thin films are deposited on silicon wafer by electroless method and treated by different annealing processes. The structure of as-deposited film exhibits the mixture of amorphous and microcrystalline phases, and the M-s is 150 emu/cc and H-c is 24 Oe. Rapid thermal annealing (RTA) could avoids the impurity and the M-s of the sample reached the maximum value about 413 emu/cc after RTA process at 350 degrees C. A magnetic field about 5000 Oe was applied during RTA process, which resulted in higher crystallization temperature, higher value of M-s and lower value of H-c.
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