Thermoelectric Properties of Ti Doped N-Type SiC Composites

YIN Yuzhe,CHEN Hong,HE Yuanjin
DOI: https://doi.org/10.3321/j.issn:1000-0054.2000.02.002
2000-01-01
Abstract:N type SiC materials with good thermoelectric properties were synthesized by doping Ti into SiC based on composites using the transient plastic phase processing (TPPP) method. The SiC was inifially a nano powder and the holding temperature and time were casefully selected. The power factor f P reaches 1.5×10 -5 W·m·K -2 at room temperature and increases to 1.5×10 -4 W·m·K -2 at 400℃, which is about 100 times the power factor used in the polycarbosilane reacting sintering method. XRD and SEM images show that there are more Ti donors in the SiC when the SiC begins as a nano powder, which contributes to the significant enhancement of the Seeback coefficient.
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