Thermoelectric Properties of Ti-Doped Sic/Ticx Composite Synthesized by Tppp Method

H Chen,YZ Yin,YJ He

DOI: https://doi.org/10.1142/s0217984900000197

2000-01-01

Modern Physics Letters B

Abstract:To improve thermoelectric properties, we attempt to dope Ti into SiC-based composite by transient plastic phase process (TPPP) method. The final result is composed of the functional phase SiC and the reinforcement phases TiCx and TiSi2. The process of doping is the diffusion of Ti in TiCx solid–solution into SiC grain at high temperature. When the initial SiC is α-type of 5 μm size, the Seebeck coefficient S is less than 10 μV/K at room temperature. SEM photograph shows the reason being that doping is very weak. We change the initial SiC to the β-type of 90 nm size to aid doping. It is observed that S can be significantly improved to 46.3 μV/K at room temperature. When the temperature rises, the improvement is even greater. Measurements of the lattice parameter of β-SiC show that the parameter parallel to the Si–C layer is almost unchanged and the parameter perpendicular to the Si–C layer increases by about 0.48%, which demonstrated that Ti has been successfully doped into the SiC grain and exists as interstitial impurities.