Effect of Ti Doping on the Thermoelectric Properties of YNiSb Half-Heusler Alloy

Xinbing Zhao
2011-01-01
Abstract:Levitation melting has been used to fabricate Y_1-xTi_xNiSb(x=0,0.015,0.02,0.025) half-Heusler compounds and the effect of Ti doping on the thermoelectric properties has been investigated.As the Ti content increases,the thermal conductivity and the electrical conductivity of the samples decrease firstly and then increase.The decrease of the thermal conductivity is mainly due to the reduction of electronic thermal conductivity.The Seebeck coefficient of the doped samples turns to negative when the temperature is below room temperature,which indicates that the material may show n-type conduction below room temperature.Finally,the thermoelectric properties of the materials have been improved by Ti doping.The maximum ZT value of about 0.085 was obtained at 770K for the sample with x=0.015,which increases about 60% compared with that of the undoped one.
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