Numerical Simulation of the Substrate Temperature Field in a Hot\|filament CVD Reactor

戚学贵,陈则韶
DOI: https://doi.org/10.3969/j.issn.1673-2812.2001.03.005
2001-01-01
Materials Science and Engineering
Abstract:Hot-filament chemical vapor deposition is a common method used for diamond film growth. Substrate temperature profiles and concentration of carbon source are the main deposition parameters in a HFCVD system. Numerical simulations were made for radiation, substrate temperature with and without lateral heat conduction in the substrate. The results showed that the temperature field without considering lateral heat conduction is of poor uniformity. When calculation was done with lateral heat conduction, the max temperature was changed from 863K to 711K, while the min temperature from 469K to 639K. It can be concluded that lateral heat conduction increases the uniformity of the substrate surface temperature, which is beneficial for large-area growth of diamond films.
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