Numerical Simulation in Czochralski Crystal Growth by Deferred Correction QUICK Scheme

宇慧平,隋允康,张峰翊,王学锋
DOI: https://doi.org/10.3969/j.issn.1000-985x.2003.06.022
2003-01-01
Abstract:A finite volume method was used to study the melt flow in the Czochralski crystal growth process. A non-uniform staggered grid arrangement was used to avoid zigzag pressure field. A third order QUICK was used to discretize the convection term in the governing equations and it was implemented by using a deferred correction method to obtain diagonally dominant equations. The SIMPLE algorithm was employed to couple velocity and pressure field. The arithmetic was deduced by using the above method and the code developed was validated with application to the Wheeler s benchmark problems. Numerical calculations show that the present results agree quite well with available data in the literatures, and the present solver can simulate the flow with much higher Grashof number. In addition, this study shows the advantage of QUICK scheme with non-uniform grid for the simulation of crystal growth. In addition, the method was used to simulate the silicon melt growth and the result is satisfied.
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