THE MUTUAL DIFFUSION AND ABNORMAL RESISTIVITY BEHAVIOUR IN ANNEALED A-Ge/pb LAYER

LI YU-ZHI,XU CUN-YI,ZHOU GUI-EN,LIU HONG-BAO,ZHANG YU-HENG
DOI: https://doi.org/10.7498/aps.42.832
IF: 0.906
1993-01-01
Acta Physica Sinica
Abstract:We have studied behaviour of a-Ge/Pb layers after annealing at different temperatures. We obtained: (1) Pb induced amorphous Ge to crystalize. (2) There are two diffusion mecha-nism in the annealing a-Ge/Pb layers. (3) For a-Ge/Pb 200nm/100nm layers, preferred orientation Pb are recrystalllized in annealing. We also explained abnormal behaviour of resistivity during the annealing of layers.
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