Abstract:The group-Ⅲ nitrides and their related ternary alloys have been becoming the most attractive material for light emitting diodes (LEDs) and laser diodes (LDs) in the UV and blue spectral range. However, the origins of the yellow luminescence (YL), which is commonly observed in almost undoped and n-type GaN, remain unclear. The nature and the role of initial nitridation of sapphire surface and the generation of threading dislocation (TD) are ambiguous too. It is a possible way to resolve the above problems by studying the microstructures and optical properties combining the growth conditions. In this work, two kinds of GaN films were grown by MOCVD under different initial nitridation time (180 seconds for Sample A, and 90s for Sample B). The growth temperature is about 950℃. The cross-sectional transmission electron microscope (TEM) is performed near the GaN/sapphire interface. Corresponding the growth processes, there are three zones in the GaN layer: buffer layer, zone and sound zone. There are haystack-like domains in the faulted zone, in which there are high density of extended defects. The thickness of the faulted zone is about 0.4μm. Just above this region, the defects density is reduced sharply, and the quality of the layer is improved, which is identified by electron diffraction (ED) patterns. In comparison, Sample A shows about an order lower density of extended defects than Sample B, their columnar diameter is larger and its ED pattern is sharper, too. The buffer layer of Sample B is more smooth than Sample A. The appropriate rougher morphology of the buffer layer may cause that the structural disorder between the high-temperature (HT) grown island and the buffer layer is accommodated by Frank and Shockley partial dislocations. However, the TD is likely to propagate into the HT GaN from the smooth surface of the buffer layer grown after extensively nitridation of substrate. According to the position and width of X-ray diffraction peaks of (0002) and (0004), the size of crystalline grain, D and the residual strain could be calculated. The values of(D,e in)of Sample A and B are (175nm,0.167%) and (90nm,0.141%), respectively. Small size of crystalline grain may be advantageous to relieve the lattice and thermal mismatch stress, but it lead to higher density of extended defects. The width of GaN (0002) reflections of Sample A is 4min lower than that of Sample B. This result may be due to the lower screw TD. The higher density of screw TD may widen the GaN (0002) peak in X-ray rocking curve. In room temperature PL spectra, the ratio of band-edge emission intensity to YL one of Sample A is 3 orders larger than that of Sample B. Furthermore the YL in Sample B is stronger and has fine structure, while that in Sample A is nearly invisible in the PL spectrum. The GaN epilayer with high quality exhibits almost no YL emission. It is well known that the YL corresponds to the deformed crystal structure. We assigned that the screw TD and mixed TD are attributed to the YL referring to our XRD results.

GaN:Si Single Crystal Films Grown on Sapphire Substrates by MOCVD

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Carrier transport and luminescence properties of n-type GaN

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Hexagonal GaN Epitaxial Growth on Si(111) by a Vacuum Reaction Method

Investigation of preparation and properties of epitaxial growth GaN film on Si(1 1 1) substrate

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Structure and Luminescence of A-Plane GaN on R-Plane Sapphire Substrate Modified by Si Implantation*

GaN films synthesized through reactively reconstructing Ga_2O_3 films sputtered on Ga-diffused Si substrates

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Gallium Nitride Films Synthesized by Reactive Pulsed Laser Deposition from A Gaas Target

Influence of Si Doping on Optical Characteristics of Cubic Gan Grown on (001) Gaas Substrates

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Epitaxial growth of GaN film on Si substrate

Silicon Doping Dependence of n-Type Al0.5Ga0.5 N Layers Grown by Metalorganic Chemical Vapor Deposition.

Epitaxial Growth Of Wurtzite Gan On Si(111) By A Vacuum Reactive Evaporation

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

Microstructural and Optical Properties of GaN Films on Nitrided Sapphire Substrates

Temperature-dependent electrical and optical studies on nonpolar a-plane GaN thin films with various Si-doping levels