Abstract:Pressure sensors that can work over 500 degrees C are widely needed in aerospace and petrochemical fields, while silicon based high temperature pressure sensors are difficult to survive such high temperature. Silicon carbide (SiC) shows better mechanical and electrical properties than silicon, which is a feasible candidate to replace silicon for manufacturing high temperature pressure sensor that can work over 500 degrees C. However, because of the ultra-high hardness and excellent chemical inertness of SiC, it is difficult to pattern structures on SiC wafer by common etching methods, especially deep etching. Femtosecond laser (fs-laser) is a practicable tool for SiC micromachining as reported in many literatures, but few of them concerns on SiC deep etching in fabricating high temperature pressure sensor's sensitive diaphragm. In this paper, blind holes with diameter of 1200 mu m and depth of 270 mu m were fabricated on a 350 mu m-thick 4H-SiC wafer by fs-laser, which forms an 80 mu m -thick membrane as sensitive diaphragm for pressure sensor. Experiments were conducted to study shape deviation, machining accuracy, edge morphology, sidewall steepness as well as surface roughness of the machined structure. Testing results show that the size errors of machined blind holes are 2.02 % in diameter and 0.38 % in depth, the sidewall steepness is good with an inclination angle of 1.7 degrees, and surface of the sensitive diaphragm is smooth with an average roughness of 320 nm. However, elliptical shape and over etching happens to the fabricated sensitive diaphragm because of inappropriate laser scanning mode, uneven energy distribution and laser irradiation delay. Generally, research shows that fs-laser micromachining is a feasible method for SiC deep etching in fabricating sensitive diaphragm of high temperature pressure sensor. (C) 2020 The Authors. Published by Elsevier B.V.

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