Influence of High-temperature Processing and Different Carbon Matrixes on Behaviour of Infiltration of Molten Silicon into Porous C/C Preforms

王林山,熊翔,肖鹏
DOI: https://doi.org/10.3969/j.issn.0253-6099.2003.02.024
2003-01-01
Abstract:Porous C/C preform is prepared by chemical vapor deposition(CVD) a nd resin impregnation/carbonization(IC), and then molten silicon is infiltrated into it, producing a C/C-SiC composite. The effect of high temperature processi ng(HTP) and different carbon matrixes on infiltration behaviour of molten silic on into the porous C/C preform is investigated and the effect of HTP on the quan tity of SiC forming by reaction is discussed. The results have shown that HTP pr ior to silicon infiltration is more beneficial to infiltration of liquid silico n into the porous C/C preform which is prepared by combined use of CVD and IC th an carbonization. This is due to the fact that HTP can enlarge the specific sur face area of resin carbon's pores, leading to formation of more SiC. The porous C/C preform which is densified with or finally with resion carbon is more benef icial to infiltration of liquid silicon than the porous C/C preform which is densified wi th or finally with pyrolytic carbon.
What problem does this paper attempt to address?