ABRUPT ELECTRICAL RESISTANCE CHANGE OF DOPED VO2 PHASE TRANSITION THIN FILMS

徐时清,赵康,谷臣清,马红萍,方吉祥
DOI: https://doi.org/10.3321/j.issn:0454-5648.2002.05.022
2002-01-01
Abstract:An inorganic sol-gel method was developed to synthesize Mo 6+ doped vanadium dioxide (VO 2) phase transition thin films using V 2O 5 powders and MoO 3 powders as starting materials. The structure, composition and valence of the doped films were analyzed by means of XRD and XPS. The magnitude and temperature of the abrupt electrical resistance change of the doped films were tested. The results show that the main component of the prepared film is vanadium dioxide. MoO 3 formed solid solution phases in the VO 2 thin film. The valence of MoO 3 in the doped thin films did not change and the magnitude and temperature of the abrupt electrical resistance change of the doped thin film were both decreased with the increase of MoO 3 content. When MoO 3 mass fraction in the VO 2 thin film reaches 5%, the temperature of the abrupt electrical resistance change of the doped thin film is reduced to about 30 ℃, but the magnitude of the change maintains 2 magnitude order and the performance of the doped thin film can still meet the application requirements.
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