Study on Optical and Electrical Properties and Phase-transition of the Doped VO2 Thin Films

徐时清,赵康,马红萍,谷臣清,姜中宏
DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2002.05.011
2002-01-01
Abstract:In this paper,using V 2O 5 and MoO 3 powders as starting materials,a novel preparing method,so called inorganic sol-gel,was developed to synthesize Mo 6+ doped vanadium dioxide (VO 2) thin films.The structure,composition,phase-transition temperature,magnitude of the abrupt electrical resistance change and the light transmittance before and after phase-transition of the doped thin films were tested by XRD and XPS methods.The results showed that the main component of the doped thin films was VO 2,the structure of MoO 3 doped thin films didn't change,and phase-transition temperature of the doped thin films was obviously lowered with the increase of MoO 3 doped content,but magnitude of the abrupt electrical resistance change and the abrupt change of light transmittance were also decreased,of which the abrupt electrical resistance change was more distinct.However,so far as the doped content of MoO 3 is less than 5%,magnitude of the abrupt electrical resistance change of the doped thin films can reach 2 orders,and the abrupt change of light transmittance before and after phase-transition can still keep preferably. The analysis showed that MoO 3 can dissolve in VO 2,and then reduce forbidden band's width of VO 2 as the donor,therefore,change its optical and electrical properties.
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