Abstract:Dynamic digital timing analysis is a less accurate but fast alternative to highly accurate but slow analog simulations of digital circuits. It relies on gate delay models, which allow the determination of input-to-output delays of a gate on a per-transition basis. Accurate delay models not only consider the effect of preceding output transitions here but also delay variations induced by multi-input switching (MIS) effects in the case of multi-input gates. Starting out from a first-order hybrid delay model for CMOS two-input NOR gates, we develop a hybrid delay model for Muller C gates and show how to augment these models and their analytic delay formulas by a first-order interconnect. Moreover, we conduct a systematic evaluation of the resulting modeling accuracy: Using SPICE simulations, we quantify the MIS effects on the gate delays under various wire lengths, load capacitances, and input strengths for two different CMOS technologies, comparing these results to the predictions of appropriately parameterized versions of our new gate delay models. Overall, our experimental results reveal that they capture all MIS effects with a surprisingly good accuracy despite being first-order only.

A Predictive Delay Model for CMOS Buffers

Analysis of Gate-Delay Models for High-Speed CMOS Circuits

An Optimization Design of Cmos Buffer Using Rsm Technique

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Accurate models for CMOS scaling and gate delay in deep sub-micron regime

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An iterative delay model for interconnects with coupling effects

A Delay Model for SRAM-Based FPGA Interconnections

An Effective Capacitance Model for 28-Nm and Beyond Copper Interconnect

A Hybrid Delay Model for Interconnected Multi-Input Gates