Abstract:A series of different high κ dielectrics such as HfO 2 , ZrO 2 , and Al 2 O 3 thin films were studied as an alternative material for the possible replacement of traditional SiO 2 . These large areas, as well as conformal dielectrics thin films, were grown by the atomic layer deposition technique on a p-type silicon substrate at two different deposition temperatures (150 and 250 °C). Atomic force microscopic study reveals that the surface of the films is very smooth with a measured rms surface roughness value of less than 0.4 nm in some films. After the deposition of the high κ layer, a top metal electrode was deposited onto it to fabricate metal oxide semiconductor capacitor (MOSCAP) structures. The I–V curve reveals that the sample growth at high temperatures exhibits a high resistance value and lower leakage current densities. Frequency-dependent (100 kHz to 1 MHz) C–V characteristics of the MOSCAPs were studied steadily. Furthermore, we have prepared a metal oxide semiconductor field-effect transistor device with Al-doped ZnO as a channel material, and the electrical characteristic of the device was studied. The effect of growth temperature on the structure, surface morphology, crystallinity, capacitance, and dielectric properties of the high κ dielectrics was thoroughly analyzed through several measurement techniques, such as XRD, atomic force microscopy, semiconductor parameter analysis, and ultraviolet-visible spectroscopy.

Energy band diagram of metal/Tm2O3/Si stack structure acquired from the study of leakage current mechanisms

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Investigation of a 4H—SiC metal—insulation—semiconductor structure with an Al2O3/SiO2 stacked dielectric

Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Comparative Study of TiO_2/SiO_2 and TiO_2/SiO_xN_y High-k Gate Dielectric Stacks

Current Conduction And Stability Of Ceo2/La2o3 Stacked Gate Dielectric

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Degradation mechanisms of electron mobility in metal-oxide-semiconductor field-effect transistors with LaAlO3 gate dielectric

Interface State Density Modification and Dielectric Reliability Enhancement of ErTi x O y /Al 2 O 3 /InP Laminated Stacks

Band offsets of epitaxial Tm 2O 3 high-k dielectric films on Si substrates by X-ray photoelectron spectroscopy

ALD metal-gate/high-k gate stack for Si and Si0.7Ge0.3 surface-channel pMOSFETs

Room Temperature Si Δ-Growth on Ge Incorporating High-K Dielectric for Metal Oxide Semiconductor Applications

Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

Observation of MOSFET-like behavior of a TFT based on amorphous oxide semiconductor channel layer with suitable integration of atomic layered deposited high-k gate dielectrics

Observation of Different Transport Behaviors in a Two-Dimensional MoTe2 Field-Effect Transistor with Engineered Gate Stack

C-V and J-V Investigation of HfO2/Al2O3 Bilayer Dielectrics MOSCAPs on (100) Β-Ga2o3

Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO$_{\text{2}}$/Al$_{\text{2}}$O$_{\text{3}}$ Gate Dielectrics

Oxygen Scavenging Effect of LaLuO3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors*