Abstract:High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction capability. Besides, under identical conditions of gate oxide thickness and gate voltage, the high-k dielectric enables a greater charge accumulation in the channel region, resulting in a larger number of free electrons available for conduction. However, the lower energy band gap of high-k materials leads to significant leakage currents at the interface with SiC, which greatly affects device reliability. By inserting a layer of SiO2 between the high-k material and SiC, the interfacial barrier can be effectively widened and hence the leakage current will be reduced. In this study, the optimal thickness of the intercalated SiO2 was determined by investigating and analyzing the gate dielectric breakdown voltage and interfacial defects of a dielectric stack composed of atomic-layer-deposited Al2O3 layer and thermally nitride SiO2. Current–voltage and high-frequency capacitance–voltage measurements were performed on metal–oxide–semiconductor test structures with 35 nm thick Al2O3 stacked on 1 nm, 2 nm, 3 nm, 6 nm, or 9 nm thick nitride SiO2. Measurement results indicated that the current conducted through the oxides was affected by the thickness of the nitride oxide and the applied electric field. Finally, a saturation thickness of stacked SiO2 that contributed to dielectric breakdown and interfacial band offsets was identified. The findings in this paper provide a guideline for the SiC gate dielectric stack design with the breakdown strength and the interfacial state defects considered.

Comparative Study of TiO_2/SiO_2 and TiO_2/SiO_xN_y High-k Gate Dielectric Stacks

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Modification of Band Alignments and Optimization of Electrical Properties of Ingazno Mos Capacitors with High-K Hfoxny Gate Dielectrics

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

High-k gate stack Hf x Ti1−x ON/SiO2 for SiC MOS devices

Interface Properties Study on SiC MOS with High-K Hafnium Silicate Gate Dielectric

Saturation Thickness of Stacked SiO2 in Atomic-Layer-deposited Al2O3 Gate on 4H-Sic

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

Energy band diagram of metal/Tm2O3/Si stack structure acquired from the study of leakage current mechanisms

Interface State Density Modification and Dielectric Reliability Enhancement of ErTi x O y /Al 2 O 3 /InP Laminated Stacks

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Investigation of a 4H—SiC metal—insulation—semiconductor structure with an Al2O3/SiO2 stacked dielectric

Current Conduction And Stability Of Ceo2/La2o3 Stacked Gate Dielectric

Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate

Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

Deposition of SiOxNy films as gate insulator via r.f. reactive sputtering

Investigation of Composition and C-V Characteristics in the Reactive Sputtered SiO_xN_y Gate Dielectric Film