Failure Mechanism Analysis of Single-Event Effect in 4H-SiC Inverters
Yong Gu,Yurui Yang,Jie Ma,Hongyang Wen,Xiangyu Hou,Jingjing Hong,Lanlan Yang,Jiaxing Wei,Ao Liu,Runhua Huang,Song Bai,Long Zhang,Siyang Liu,Weifeng Sun
DOI: https://doi.org/10.1109/ted.2024.3441555
IF: 3.1
2024-09-28
IEEE Transactions on Electron Devices
Abstract:The failure mechanism of single-event burnout (SEB) in 4H-SiC inverter is studied by experiments and simulations. The most sensitive location for heavy ions striking in the 4H-SiC inverter circuit has been identified by pulsed laser experiments. Experimental results demonstrate that the maximum linear energy transfer (LET) value that the 4H-SiC inverter circuit can withstand is exceeding 64.07 MeV cm2/mg but not surpassing 92.25 MeV cm2/mg. Sentaurus TCAD is utilized to reveal the failure mechanism. The incident heavy-ion radiation triggers the activation of parasitic p-n-p and n-p-n transistors, resulting in a latch-up phenomenon within the circuit, consequently leading to the circuit burnout. The revealed failure mechanism gives a guidance for further hardened circuits design.
engineering, electrical & electronic,physics, applied