Abstract:One of the challenges of silicon quantum dots (Si QDs) in practical application as quantum dot-based light-emitting diodes is the irreversible degradation induced by humid conditions, revealing their excited state electronic properties strongly influenced by the surface water, however, the photoluminescence (PL) mechanism associated with the change of excited state electronic properties remains elusive. Here, we performed the time-dependent density functional theory calculations to investigate how the PL of Si29H36, as a typically spherical Si QDs, is determined by the dipole-dipole interaction between water molecules and different surface substituent groups. Relative to the hydrophobic group of pure hydrogen passivation, the substituent effect with a hydrogen atom replaced by a fluorine atom almost has no influence on the PL of Si QDs as the adsorption of water clusters. Interestingly, although a hydrophilic hydroxyl group substitution itself will partly change the surface state with the slight blue-shift of PL, the intensive dipole-dipole interaction between a hydroxyl group and water molecules can drastically induce the delocalized electron to be localized, resulting in a dual-band peak observed in the PL spectra of the Si29H35OH surrounded by four or five water molecules. This distinct PL mechanism originates from the adsorption of water molecules through dipole-dipole interaction inducing the existence of surface trap states. The presence of highly polarizable double-bonded oxygen will trigger the electron distribution centered on the silicon-oxygen double bond, resulting in the corresponding PL spectrum of Si29H35O unaffected by the water molecules. This study reveals that the PL of Si QDs with the substituent hydroxyl group is extremely sensitive to humidity and lays a foundation for the practical application of Si QDs as optoelectronic devices.

Effect of Water Adsorption on the Photoluminescence of Silicon Quantum Dots.

Origin of Humidity Influencing the Excited State Electronic Properties of Silicon Quantum Dots based Light-emitting Diodes

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Optimum Quantum Yield of the Light Emission from 2 to 10 Nm Hydrosilylated Silicon Quantum Dots

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

Water‐Dispersible Silicon‐Quantum‐Dot‐Containing Micelles Self‐Assembled from an Amphiphilic Polymer

Luminescence Mechanism in Hydrogenated Silicon Quantum Dots with a Single Oxygen Ligand

Silicon Quantum Dots: Water‐Dispersible Silicon‐Quantum‐Dot‐Containing Micelles Self‐Assembled from an Amphiphilic Polymer (part. Part. Syst. Charact. 7/2014)

Luminescence Mechanism of Ligand-induced Interface States in Silicon Quantum Dots

Optical properties of Ge/Si quantum dot superlattices

The luminescence mechanism of ligand-induced interface states in silicon quantum dots

Research Progress in Application of Silicon Quantum Dots in Optoelectronic Devices

Luminescent, water-soluble silicon quantum dots via micro-plasma surface treatment

Effect of H2O Molecule Adsorption on the Electronic Structure and Optical Properties of the CsI(Na) Crystal

Solvent effect on light-emitting property of Si nanocrystals

Interaction Between Water Molecules and 3C-Sic Nanocrystal Surface

Superior hydrophobic silica-coated quantum dot for stable optical performance in humid environments

Influence of hydrogen passivation on the luminescence of Si quantum dots embedded in Si3Nx

Water Effects on Colloidal Semiconductor Nanocrystals: Correlation of Photophysics and Photochemistry

Quantum Size-Dependent Luminescence and Nonlinear Optical Properties of Silicon Quantum Dots/sio2 Multilayer

Silanized carbon quantum dots assembled porous glass and its luminescent properties