Photoelasticy Method for Study of Structural Imperfection of Zngep2 Crystals

Zuotao Lei,A. O. Okunev,Chongqiang Zhu,G. A. Verozubova,Tianhui Ma,Chunhui Yang
DOI: https://doi.org/10.1016/j.jcrysgro.2016.03.040
IF: 1.8
2016-01-01
Journal of Crystal Growth
Abstract:The stresses, related to rows and accumulations of dislocations were revealed by photoelastic method for ZnGeP2 crystals, grown by Vertical Bridgman method. A comparison of information from topographs of photoelastic method and X-Ray topography based on Borrmann method was carried out. It was shown that the strongest contrast is observed on boundaries of dislocation rows and regions of relatively perfect crystals. Photoelastic method gives information about defect structure, where X-Ray topography can not be applied because of high density of defects and disorientation of reflection planes. Because of high sensitivity of photoelastic method the images of defects have larger size then in X-Ray topography. That is why in ZnGeP2 predominately the total contrast from dislocation rows is fixed. However, in low angle boundaries photoelastic images of separate dislocations were revealed. By comparison with results of simulation it was stated that they are created by edge dislocation of slip system {1¯10}〈110〉, what confirms the data, obtained by Borrmann method.Thus, photoelastic method can be from one side a simple and express method of analysis of ZnGeP2 plates cut along the plane of optical isotropy (001), and from other side an analytical method of identification of dislocations and other defects in this material.
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