Abstract:Three dual-wavelength InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) with increasing indium content are grown by metal-organic chemical vapor deposition, which contain six periods of low-In-content MQWs and two periods of high-In-content MQWs. For the low-In-content MQWs of three studied samples, their internal quantum efficiency (IQE) shows a rising trend as the emission wavelength increases from 406 nm to 430 nm due to the suppression of carriers escape from the wells to the barriers. However, for the high-In-content MQWs, the sample IQE falls rapidly with a further increase of emission wavelength from 496 nm to 575 nm. Theoretical calculation reveals that the electron-hole wave function overlap in the high-In-content MQWs is reduced because of an increase in the internal polarization field as indium content is increased. In addition, time-resolved photoluminescence decay curves show that the carriers generated in the low-In-content MQWs can be effectively transferred to the high-In-content part through the reabsorption process. However, the transfer time gradually becomes longer as emission wavelength increases, which means a reduction of carrier transfer rate between the different indium content MQWs. Furthermore, nonradiative recombination is enhanced in the high-In-content MQWs with longer emission wavelength due to the decline of crystal quality. Therefore, the fast drop of IQE for high-In-content MQWs can be attributed to the increase of the internal polarization field, the decrease of carrier transfer efficiency, and the enhanced nonradiative recombination. This research has a certain guiding value for an understanding of the recombination mechanism in the InGaN/GaN MQWs and for achieving high quality multiple-wavelength LEDs with better performance.

Investigation of photoluminescence dynamics in InGaN/GaN multiple quantum wells

Non-exponential Photoluminescence Decay Dynamics of Localized Carriers in Disordered InGaN/GaN Quantum Wells: the Role of Localization Length

Time-resolved and Temperature-Varied Photoluminescence Studies of InGaN/GaN Multiple Quantum Well Structures

A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures

Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells

Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer

Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence

Phonon Emission by Photoexcited Carriers in InGaN/GaN Multiple Quantum Wells

Photoluminescence Properties of a GaN0.015As0.985/GaAs Single Quantum Well under Short Pulse Excitation

Two-photon Photoluminescence and Excitation Spectra of InGaN∕GaN Quantum Wells

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

Time-resolved Photoluminescence Characterization of InGaN/GaN Quantum Wells

Photoluminescence Properties of Blue and Green Multiple InGaN/GaN Quantum Wells

Temperature-dependent steady and transient emission properties of InGaN/GaN multiple quantum well nanorods

Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate

Investigation of the Light Emission Properties and Carrier Dynamics in Dual-Wavelength InGaN/GaN Multiple-Quantum Well Light Emitting Diodes

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Localized Exciton Dynamics in AlInGaN Alloy

Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells

Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures

Photoluminescence Study of InGaN/GaN Quantum Dots Grown on Passivated GaN Surface