Abstract:We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with an ${\mathrm{Al}}_{0.4}{\mathrm{Ga}}_{0.6}\mathrm{As}$ barrier due to the D'yakonov-Perel' mechanism from nearly $20\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ to room temperature by constructing and numerically solving the kinetic spin Bloch equations. We consider all the relevant scattering such as the electron-acoustic-phonon, the electron-longitudinal-optical-phonon, the electron-nonmagnetic-impurity, and the electron-electron Coulomb scattering to the spin relaxation. The spin relaxation times calculated from our theory with a fitting spin splitting parameter are in good agreement with the experimental data by Ohno et al. [Physica E (Amsterdam) 6, 817 (2000)] over the whole temperature regime (from $20\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$). The value of the fitted spin splitting parameter agrees with many experiments and theoretical calculations. We further show the temperature dependence of the spin relaxation time under various conditions such as electron density, impurity density, and well width. We predict a peak solely due to the Coulomb scattering in the spin relaxation time at low temperature $(l50\phantom{\rule{0.3em}{0ex}}\mathrm{K})$ in samples with low electron density (e.g., density less than $1\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$) but high mobility. This peak disappears in samples with high electron density (e.g., $2\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$) and/or low mobility. The hot-electron spin kinetics at low temperature is also addressed with many features quite different from the high-temperature case predicted.

Temperature-Dependent Spin Injection Dynamics in Ingaas/Gaas Quantum Well-Dot Tunnel-Coupled Nanostructures

Temperature dependence of inter-dot electron-spin transfer among laterally coupled excited states in high-density InGaAs quantum dots

Parametric Properties of the Electron Spin Relaxation Due to Spin-Orbit Interaction in Inas Quantum Dots

Transient photoluminescence study on spin dynamics in InGaAs-based coupled nanostructures of quantum dots with quantum wells

Temperature-Dependent Carrier Tunneling for Self-Assembled Inas/Gaas Quantum Dots with A Gaasn Quantum Well Injector

Power-Dependent Spin Amplification In (In, Ga) As/Gaas Quantum Well Via Pauli Blocking By Tunnel-Coupled Quantum Dot Ensembles

Temperature-Dependent Carrier Dynamics In Self-Assembled Ingaas Quantum Dots

Temperature Dependence of Optical Transitions of One Dimensional InGaAs/GaAs Quantum Structures

Spin Depolarization under Low Electric Fields at Low Temperatures in Undoped InGaAs/AlGaAs Multiple Quantum Well

Optical Spin Orientation in (110) Gaas Quantum Wells at Room Temperature

Spin Relaxation in N-Type Gaas Quantum Wells from A Fully Microscopic Approach

Temperature insensitive optical alignment of the exciton in nanowire embedded GaN Quantum Dots

Phonon-mediated spin dynamics in a two-electron double quantum dot under a phonon temperature gradient

Spin Diffusion/transport in N-Type GaAs Quantum Wells

Localized and Free Exciton Spin Relaxation Dynamics in GaInNAs∕GaAs Quantum Well

Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature.

Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure

Temperature-Dependence Of Luminescence Efficiency, Exciton Transfer, And Exciton Localization In Gaas/Alxga1-Xas Quantum Wires And Quantum Dots

Diffusion and Transport of Spin Pulses in an N-Type Semiconductor Quantum Well

Exciton Relaxation and Coupling Dynamics in a GaAs/AlxGa1−xAs Quantum Well and Quantum Dot Ensemble

Spin Relaxation Dynamics of Holes in Intrinsic GaAs Quantum Wells Studied by Transient Circular Dichromatic Absorption Spectroscopy at Room Temperature