Abstract:The mechanical stretchability is the magnitude of strain which a material can suffer before it breaks. Materials with high mechanical stretchability, which can reversibly withstand extreme mechanical deformation and cover arbitrary surfaces and movable parts, are used for stretchable display devices, broadband photonic tuning and aberration-free optical imaging. Strain can be utilised to control the band structures of materials and can even be utilised to induce a topological phase transition, driving the normal insulators to topological non-trivial materials with non-zero Chern number or Z2 number. Here, we propose a new two-dimensional topological material with ultra-high mechanical stretchability - the ditch-like 2D arsenic. This new anisotropic material possesses a large Poisson's ratio 1.049, which is larger than any other reported inorganic materials and has a ultra-high stretchability 44% along the armchair direction, which is unprecedent in inorganic materials as far as we know. Its minimum bend radius of this material can be as low as 0.66 nm, which is comparable to the radius of carbon-nanotube. Such mechanical properties make this new material be a stretchable semiconductor which could be used to construct flexible display devices and stretchable sensors. Axial strain will make a conspicuous affect on the band structure of the system, and a proper strain along the zigzag direction will drive the 2D arsenic into the topological insulator in which the topological edge state can host dissipation-less spin current and spin transfer toque, which are useful in spintronics devices such as dissipation transistor, interconnect channels and spin valve devices.

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Two-Dimensional Arsenic Monolayer Sheet Predicted from First-Principles

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Tunable electronic and magneto-optical properties of monolayer arsenene: From GW0 approximation to large-scale tight-binding propagation simulations

Electronic structures and optical properties of arsenene and antimonene under strain and an electric field

Theoretical studies on tunable electronic structures and potential applications of two-dimensional arsenene-based materials

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Atomically Thin Arsenene And Antimonene: Semimetal-Semiconductor And Indirect-Direct Band-Gap Transitions

Quantum Spin Hall Insulators in Functionalized Arsenene (asx, X = F, OH and CH3) Monolayers with Pronounced Light Absorption.

Ultra-high mechanical stretchability and controllable topological phase transitions in two-dimensional arsenic

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Black Arsenic: A Layered Semiconductor with Extreme in-plane Anisotropy

2D Arsenenes

Band Structure, Band Offsets, and Intrinsic Defect Properties of Few-Layer Arsenic and Antimony

Hydrogenated arsenenes as planar magnet and Dirac material