Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer

Kaihua Cao,Huisong Li,Wenlong Cai,Jiaqi Wei,Lezhi Wang,Yanpeng Hu,Qifeng Jiang,Hushan Cui,Chao Zhao,Weisheng Zhao
DOI: https://doi.org/10.1109/TMAG.2018.2877446
IF: 1.848
2019-01-01
IEEE Transactions on Magnetics
Abstract:The temperature dependence of magnetoresistance and switching characterization based on spin transfer torque (STT) effect of perpendicular magnetic tunnel junctions (p-MTJs) with MgO/CoFeB/W/CoFeB/MgO double-interface free layer was studied. The tunneling magnetoresistance (TMR) ratio increases from 95% to 176% for both 84 and 64 nm-diameter p-MTJs, upon decreasing the temperature from 400 to 20 K...
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