Current-induced magnetization switching in MgO barrier based magnetic tunnel junctions with CoFeB/Ru/CoFeB synthetic ferrimagnetic free layer

Jun Hayakawa,Shoji Ikeda,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno

DOI: https://doi.org/10.1143/JJAP.45.L1057

2006-09-28

Abstract:We report the intrinsic critical current density (Jc0) in current-induced magnetization switching and the thermal stability factor (E/kBT, where E, kB, and T are the energy potential, the Boltzmann constant, and temperature, respectively) in MgO based magnetic tunnel junctions with a Co40Fe40B20(2nm)/Ru(0.7-2.4nm)/Co40Fe40B20(2nm) synthetic ferrimagnetic (SyF) free layer. We show that Jc0 and E/kBT can be determined by analyzing the average critical current density as a function of coercivity using the Slonczewski's model taking into account thermal fluctuation. We find that high antiferromagnetic coupling between the two CoFeB layers in a SyF free layer results in reduced Jc0 without reducing high E/kBT.

Materials Science

What problem does this paper attempt to address?

This paper aims to solve the problem of how to achieve current - induced magnetization switching (CIMS) in MgO - barrier - based magnetic tunnel junctions (MTJs) while maintaining high thermal stability at the same time. Specifically, the research focuses on MTJs using CoFeB/Ru/CoFeB synthetic ferrimagnetic (SyF) free layers and explores their intrinsic critical current density \(J_{c0}\) and thermal stability factor \(E/k_BT\).

### Main problems:
1. **Reducing the critical current density \(J_c\)**: In order for such a system to be used in magnetic random - access memory (MRAM), the critical current density \(J_c\) needs to be further reduced so that magnetization switching can be achieved with a smaller current.
2. **Maintaining high thermal stability**: While reducing \(J_c\), it is necessary to ensure that the thermal stability factor \(E/k_BT\) is high enough (exceeding 40) to guarantee non - volatility for more than 10 years.
3. **Solving the problem of thermal stability degradation at the nanoscale**: The thermal stability of the traditional single - free - layer structure will decrease significantly when the size is reduced, so an alternative solution needs to be found.

### Solutions:
The researchers proposed using a synthetic ferrimagnetic (SyF) free layer as an alternative. The SyF structure is separated by two or more ferromagnetic layers through a non - magnetic spacer layer (such as a Ru thin film) and is expected to provide a larger volume to resist thermal fluctuations. By analyzing the relationship between the average critical current density \(J_{c\text{ave}}\) and the coercive force \(H_c\) at different Ru thicknesses and considering the thermal activation characteristics using the Slonczewski model, the paper successfully determined \(J_{c0}\) and \(E/k_BT\).

### Key findings:
- High antiferromagnetic coupling energy reduces \(J_{c0}\) between the two CoFeB layers, while the thermal stability factor \(E/k_BT\) still remains at a high level.
- The experimental results show that when the thickness of the Ru layer is 0.7 nm, the MTJs with the highest antiferromagnetic coupling energy exhibit a lower \(J_{c0}\) and a higher \(E/k_BT\).

### Conclusions:
Through experimental and theoretical analysis, the paper proves that MTJs using CoFeB/Ru/CoFeB synthetic ferrimagnetic free layers can maintain high thermal stability while reducing the critical current density, providing new ideas and methods for the development of high - performance magnetic random - access memory.

### Related formulas:
1. The key equation in the Slonczewski model:
\[
J_c = J_{c0}\left[1-\left(\frac{k_BT}{E}\right)\ln\left(\frac{\tau_p}{\tau_0}\right)\right]
\]
where:
- \(J_c\) is the critical current density
- \(J_{c0}\) is the intrinsic critical current density
- \(k_B\) is the Boltzmann constant
- \(T\) is the temperature
- \(E\) is the energy barrier
- \(\tau_p\) is the current pulse duration
- \(\tau_0\) is the reciprocal of the spin precession frequency

2. Thermal stability factor:
\[
E/k_BT=\frac{M_sVH_k}{2k_BT}
\]
where:
- \(M_s\) is the saturation magnetization intensity of the free layer
- \(V\) is the volume of the free layer
- \(H_k\) is the in - plane uniaxial magnetic anisotropy field

These formulas and experimental results jointly verify the potential of the SyF free layer in improving MTJ performance.