Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques
Wenlong Cai,Kewen Shi,Yudong Zhuo,Daoqian Zhu,Yan Huang,Jialiang Yin,Kaihua Cao,Zhaohao Wang,Zongxia Guo,Zilu Wang,Gefei Wang,Weisheng Zhao
DOI: https://doi.org/10.1109/led.2021.3069391
IF: 4.8157
2021-05-01
IEEE Electron Device Letters
Abstract:The interplay of spin-transfer torque (STT) and spin-orbit torque (SOT) highlights the potential of current-induced magnetization reversal for the ultrahigh-speed and ultralow-power memory applications. However, the ultrafast field-free switching and its dynamic mechanism have not been clarified yet. Here, we experimentally demonstrate the sub-nanosecond field-free switching by the interplay of STT and SOT in perpendicular magnetic tunnel junctions (MTJs). The dynamic investigations of the STT and SOT switching reveal that the applied SOT current can highly decrease the incubation time and current density of STT, which leads to the achievement of ultra-fast switching. Besides, the timing scheme investigations of SOT and STT pulses are performed. The firstly applied SOT current further decreases the transition time of the magnetization switching, which could result from the different nucleation and motions of domains. The interplay and the timing operations of STT and SOT provide more flexible solutions for high-speed, large-scalability and energy efficient memory applications.
engineering, electrical & electronic