Abstract:Two-dimensional metal dichalcogenides have garnered significant interest in the realm of electronic applications on account of their tunable electronic structures and high carrier mobility. Utilizing first-principles calculations and deformation potential (DP) theory, a comprehensive investigation on the electronic, mechanical, and carrier transport properties of 1T-SnS 2 monolayer under strain engineering is investigated in this work. The 1T-SnS 2 monolayer emerges as energetically stable within an applied equal-biaxial strain interval of −8% to 8%, satisfying Born's criterion for the elastic constants and thus manifesting remarkable mechanical stability. The lattice parameter, bond length, bond angle, and bandgap dynamically respond to the applied equal-biaxial strain. The band structure calculated using generalized gradient approximation (GGA) and spin-orbit coupling (SOC) of the 1 T-SnS 2 monolayer demonstrates the characteristic of an indirect bandgap semiconductor, accompanied by tunable bandgap under strain engineering. Additionally, the carrier transport properties of 1T-SnS 2 monolayer under strain engineering are also evaluated on the basis of DP theory, and a pronounced anisotropy is discovered in the effective mass, carrier relaxation time, and carrier mobility along the x - and y -direction. Notably, the application of a strain of −4% and 4% on the 1T-SnS 2 monolayer has resulted in high electron mobility of 6233.21 cm 2 /V·s and hole mobility of 1195.62 cm 2 /V·s. Our present work not only underscores the substantial influence of strain engineering on the electronic, mechanical, and carrier transport properties of 1 T-SnS 2 monolayer but also provides critical insights into the strain-based tuning of two-dimensional metal dichalcogenides for electronics and optoelectronics.

A First Principle Study of the Carrier Mobility and Injection Velocity for Strained 2D Materials MOSFETs

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Enhancing Carrier Mobility in Monolayer MoS 2 Transistors with Process-Induced Strain

Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Electronic Structure and Quantum Transport Properties of 2D SiP: A First-Principles Study

Enhancement of Carrier Mobility in Semiconductor Nanostructures by Carrier Distribution Engineering

Ab-Initio Simulations of Monolayer InSe and MoS2 Strain Effect: from Electron Mobility to Photoelectric Effect

First Principles Simulations of Nanoscale Silicon Devices with Uniaxial Strain

Tailoring the Electronic, Mechanical, and Carrier Transport Properties of 1t‐sns2 Monolayer Via Strain Engineering: A First-Principles Study

Mobility Enhancement of Strained MoS 2 Transistor on Flat Substrate

Rigorous Modeling and Investigation of Low-Field Hole Mobility in Silicon and Germanium Gate-All-Around Nanosheet Transistors

Tailoring the electronic, mechanical, and carrier transport properties of 1T‐SnS 2 monolayer via strain engineering: A first-principles study

Strain engineering in 2D FETs: Physics, status, and prospects

Enhancement of Carrier Mobility in Multilayer InSe Transistors by van der Waals Integration

DFT Coupled with NEGF Study of N-Type MOSFET Based on 2D Planar B2S3 Semiconductor

High-Performance Sub-10 Nm Two-Dimensional SbSeBr Transistors Through Transport Orientation.

Comprehensive understanding of intrinsic mobility and sub-10 nm quantum transportation in Ga2SSe monolayer

First-principles Based Ballistic Transport Simulation of Monolayer and Few-Layer InSe FETs