Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Demonstration of On-Chip Quantum Dot Microcavity Lasers in a Molecularly Engineered Annular Groove

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Toward On-Chip Unidirectional and Single-Mode Polymer Microlaser

Ultra-Low Threshold Lasing In A Quantum Dot Microdisk Cavity

Fabrication of Optical Cavities with Femtosecond Laser Pulses

Tunable Quantum Dot Lasers Grown Directly on Silicon

Colloidal Quantum Dot Lasers and Hybrid Integrations

Transfer-printed quantum-dot nanolasers on a silicon photonic circuit

Monolithic Quantum Dot Discrete Mode Laser on SOI

Demonstration of a White Laser with V2C MXene-Based Quantum Dots

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Configurable Integration of On‐Chip Quantum Dot Lasers and Subwavelength Plasmonic Waveguides

Turnkey locking of quantum-dot lasers directly grown on Si

Experimental Demonstration of Nanophotonic Devices and Circuits with Colloidal Quantum Dot Waveguides.

Indistinguishable photons from the resonance fluorescence of a single quantum dot in a microcavity

Emission cells with quantum dots on silicon chip prepared by using fs pulsed laser

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

Innovative Integration of Dual Quantum Cascade Lasers on Silicon Photonics Platform

Ultra-Low Threshold Monolayer Semiconductor Nanocavity Lasers

High- β lasing in photonic-defect semiconductor-dielectric hybrid microresonators with embedded InGaAs quantum dots

InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods