An a-InGaZnO TFT Gate Driver Circuit with Positive Feedback Effect

Tengteng Lei,Congwei Liao,Jie Huang,Ying Wang,Shengdong Zhang
DOI: https://doi.org/10.1109/CAD-TFT.2018.8608053
2018-01-01
Abstract:An a-InGaZnO TFT integrated gate driver circuit with a new inverter is proposed. The inverter features positive feedback from the output electrode to the gate electrode of the pull-up transistor, for suppressing the leakage current and enhancing the pull-up ability. Compared with the conventional designs, the proposed gate driver exhibits extended Vth shift margin from −8 V to +9 V.
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