Abstract:Two-dimensional van der Waals (2D vdW) ferromagnets possess outstanding scalability, controllable ferromagnetism, and out-of-plane anisotropy, enabling the compact spintronics-based non-volatile in-memory computing (nv-IMC) that promises to tackle the memory wall bottleneck issue. Here, by employing the intriguing room-temperature ferromagnetic characteristics of emerging 2D Fe3GeTe2 with the dissimilar electronic structure of the two spin-conducting channels, we report on a new type of non-volatile spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device based on Fe3GeTe2/MgO/Fe3GeTe2 heterostructure, which demonstrates the uni-polar and high-speed field-free magnetization switching by adjusting the ratio of field-like torque to damping-like torque coefficient in the free layer. Compared to the conventional 2T1M structure, the developed 3-transistor-2-MTJ (3T2M) cell is implemented with the complementary data storage feature and the enhanced sensing margin of 201.4% (from 271.7 mV to 547.2 mV) and 276% (from 188.2 mV to 520 mV) for reading "1" and "0", respectively. Moreover, superior to the traditional CoFeB-based MTJ memory cell counterpart, the 3T2M crossbar array architecture can be executed for AND/NAND, OR/NOR Boolean logic operation with a fast latency of 24 ps and ultra-low power consumption of 2.47 fJ/bit. Such device to architecture design with elaborated micro-magnetic and circuit-level simulation results shows great potential for realizing high-performance 2D material-based compact SOT magnetic random-access memory, facilitating new applications of highly reliable and energy-efficient nv-IMC.

High-Density and Fast-Configuration Non-Volatile Look-Up Table Based on NAND-Like Spintronic Memory

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Experimental Demonstration of NAND-Like Spin-Torque Memory Unit

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Spin-Orbit Torque Neuromorphic Fabrics for Low-Leakage Reconfigurable In-Memory Computation

Parallel-Prefix Adder in Spin-Orbit Torque Magnetic RAM for High Bit-Width Non-Volatile Computation

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

Area-Efficient 1T-2D-2MTJ SOT-MRAM Cell for High Read Performance

High On/Off Ratio Spintronic Multi‐Level Memory Unit for Deep Neural Network

Energy Efficient Computing with High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM)

In-Memory Computing with Spintronic Devices

Persistent and Nonpersistent Error Optimization for STT-RAM Cell Design.

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Low-Power Variation-Tolerant Nonvolatile Lookup Table Design.

Resistance-Sum Architecture for Voltage-Controlled SOT-MRAM based Computing-in-Memory With Hybrid References

Spin and Charge Related Data Storage in Transition Metal Oxides

HXNOR-PBNN: A Scalable and Parallel Spintronics Synaptic Architecture for Probabilistic Binary Neural Networks

Electrically Reconfigurable 3D Spin‐Orbitronics

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

RAM and TCAM Designs by Using STT-MRAM

NAND-like SOT-MRAM-based Approximate Storage for Error-Tolerant Applications