Beneficial Effect of S-Filling on Thermoelectric Properties of S-X Co4Sb11.2Te0.8 Skutterudite

Hongtao Wang,Bo Duan,Guanghui Bai,Jialiang Li,Yue Yu,Houjiang Yang,Gang Chen,Pengcheng Zhai
DOI: https://doi.org/10.1007/s11664-017-5891-0
IF: 2.1
2017-01-01
Journal of Electronic Materials
Abstract:In this work, Te-doped and S-filled S x Co4Sb11.2Te0.8 (x = 0.1, 0.15, 0.2, 0.25, 0.3, 0.4) skutterudite compounds have been prepared using solid state reaction and spark plasma sintering. Thermoelectric measurements of the consolidated samples were examined in a temperature range of 300–850 K, and the influences of S-addition on the thermoelectric properties of S x Co4Sb11.2Te0.8 skutterudites are systematically investigated. The results indicate that the addition of sulfur and tellurium is effective in reducing lattice thermal conductivity due to the point-defect scattering caused by tellurium substitutions and the cluster vibration brought by S-filling. The solubility of tellurium in skutterudites is enhanced with sulfur addition via charge compensation. The thermal conductivity decreases with increasing sulfur content. The highest figure of merit, ZT = 1.5, was obtained at 850 K for S0.3Co4Sb11.2Te0.8 sample, because of the low lattice thermal conductivity.
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