Dual occupations of sulfur induced band flattening and chemical bond softening in p-type S Co4Sb12-2S2 skutterudites
Jialiang Li,Xiaolian Zhang,Haoqin Ma,Bo Duan,Guodong Li,Jiong Yang,Hongtao Wang,Houjiang Yang,Ling Zhou,Pengcheng Zhai
DOI: https://doi.org/10.1016/j.jmat.2021.05.003
IF: 8.589
2022-01-01
Journal of Materiomics
Abstract:The electronegative filling in skutterudites not only broadened the scope of filling atoms, but also facilitated the preparation of p-type skutterudites. However, the introduction of a single sulfur atom in the Co4Sb12 cannot be achieved without charge compensation through the traditional equilibrium method. In the present study, the dual occupations of S-atoms by self-charge compensation were shown as the most stable forms under high pressure, and a series of p-type S y Co4Sb12−2y S2y skutterudites was successfully prepared by high-pressure-high-temperature (HPHT) method. The electronic structures and transport properties of as-obtained materials were investigated, and the related mechanisms were explored. The results suggested that the presence of S-impurities led to flattening of the electronic band that led to a higher Seebeck coefficient. The S-doped Co4Sb12 displayed lower elastic modulus, elastic constant, and Debye temperature, thus indicating the chemical bond softening in skutterudites. The thermal conductivities of S y Co4Sb12−2y S2y compounds reduced monotonously with the increase in S-content. This study provides a new and promising avenue for optimizing the thermoelectric properties of p-type Co4Sb12.
materials science, multidisciplinary,chemistry, physical,physics, applied