Structural and Electrical Properties of Ga2O3 Films Deposited under Different Atmospheres by Pulsed Laser Deposition

Fabi Zhang,Haiou Li,Qixin Guo

DOI: https://doi.org/10.1007/s11664-018-6545-6

IF: 2.1

2018-01-01

Journal of Electronic Materials

Abstract:The effects of oxygen and nitrogen pressure on the structural and electrical properties of crystalline β-Ga2O3 films grown by pulsed laser deposition were investigated. We found that varying the oxygen pressure from 1 × 10−4 Pa to 1 × 10−1 Pa changed the resistivity from the order of 102–103 Ω cm. Adjusting the nitrogen pressure from 1 × 10−4 Pa to 1 × 10−1 Pa increased the resistivity from the order of 104–105 Ω cm. Oxygen and nitrogen pressures in the range from 1 × 10−4 Pa to 1 × 10−1 Pa had no obvious influence on the crystal quality, surface morphology, or transmittance of the β-Ga2O3 films grown at 500°C on sapphire substrates. All the films showed a (− 201) oriented monoclinic structure with smooth surfaces and high transmittance. The obtained β-Ga2O3 films have potential for applications in thin film resistors for monolithic microwave integrated circuits.