Abstract:The fabrication of self-shunted SNS (superconductor/normalconductor/superconductor) Josephson junctions for rapid single flux quantum (RSFQ) logic could potentially facilitate increased circuit density, as well as reduced parasitic capacitance and inductance over the currently used externally shunted SIS (superconductor/insulator/superconductor) trilayer junction process. We report the deposition, fabrication, and device characterization of Josephson junctions prepared with Nb1-yTiyN electrodes and TaxN barriers tuned near the metal - insulator transition, deposited on practical large-area oxide-buffered silicon wafers. When scaled to practical device dimensions, this type of junction is found to have an IcRn product of over 0.5 mV and a critical current (I-c) and normal resistance (R-n) of magnitudes suitable for single flux quantum digital circuits. A longer than expected normal-metal coherence length (xi(n)) of 5.8 nm is inferred from the thickness dependence of J(c) at 4.2 K for junctions fabricated using a barrier resistivity of 13 m Omega cm. Although not well understood and not quantitatively predicted by conventional theories, this results in a sufficiently high I-c and IcRn to make the junctions suitable for practical applications. Similar observations of unexpectedly large Josephson coupling currents in SNS junctions have been documented in other systems, particularly in cases when the barrier is near the M - I transition, and have become known as the giant proximity effect. The temperature dependence of xi(n), I-c R-n, and J(c) are also reported. For this technology to be used in practical applications, significant improvements in our fabrication process are needed as we observe large variations in I-c and R-n values across a 100 mm wafer, presumably as a result of variations in the Ta: N stoichiometry and the resulting changes in the TaxN barrier resistivity.

Fabrication and Characterization of Superconducting RSFQ Circuits

High Density Fabrication Process for Single Flux Quantum Circuits

Internally shunted Josephson junctions with barriers tuned near the metal–insulator transition for RSFQ logic applications

Self-aligning fabrication and DC characterization of Nb/AlOx/Nb superconducting Josephson junctions

Single-flux-quantum-based Qubit Control with Tunable Driving Strength

Fabrication of Al/AlOx/Al Josephson Junctions and Superconducting Quantum Circuits by Shadow Evaporation and a Dynamic Oxidation Process

Measurement-based quantum computation with superconducting charge qubits

Single-flux-quantum circuits utilizing self-shunted NbN/TaN/NbN josephson junctions grown on silicon substrates

Simulations of Superconducting Quantum Gates by Digital Flux Tuner for Qubits

Spectroscopy Of Superconducting Charge Qubits Coupled By A Josephson Inductance

NbN-based half-flux-quantum element for integration with superconducting qubits

Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applications

Qubit Energy Tuner Based on Single Flux Quantum Circuits

Fabrication and measurements of hybrid Nb/Al Josephson junctions and flux qubits with pi-shifters

Characterization of Adiabatic Quantum-Flux-Parametrons in the MIT LL SFQ5ee+ Process

Superconductor modulation circuits for Qubit control at microwave frequencies

In situ Qubit Frequency Tuning Circuit for Scalable Superconducting Quantum Computing: Scheme and Experiment

Development of TiN/AlN-based superconducting qubit components

High speed flux sampling for tunable superconducting qubits with an embedded cryogenic transducer

Geometric Superinductance Qubits: Controlling Phase Delocalization across a Single Josephson Junction

Wafer-Scale Characterization of a Superconductor Integrated Circuit Fabrication Process, Using a Cryogenic Wafer Prober