Abstract:Detailed investigation of deep traps in HVPE-grown β-Ga2O3 epilayers has been done by performing deep-level transient spectroscopy (DLTS) from 200 K to 500 K on Pt/β-Ga2O3 and Ni/β-Ga2O3 Schottky diodes. Similar results were obtained with a fill pulse width of 100 milliseconds irrespective of different Schottky metal contacts and epilayers. Two electron traps at E2 (EC–ET =0.65 eV) and E3 (EC–ET =0.68 – 0.70 eV) with effective capture cross-sections of 4.10 × 10-14 cm2 and 5.75 × 10-15 cm2 above 300 K have been observed. Below 300 K, a deep trap with a negative DLTS signal peak was also observed at E1 (EC–ET = 0.34 – 0.35 eV) with very low capture cross-section of 3.28 × 10-17 cm2. For a short pulse width of 100 μs, only two electron traps E2 and E3 at energies of 0.72 eV, and = 0.73 eV were observed, and one order of higher corresponding effective capture cross-sections. All traps are found to be unaffected by the electric field during the field-dependence DLTS study. From the filling-pulse width dependence DLTS study, the decrease in capacitance transient amplitude with increasing pulse width has been observed opposite to the capture barrier kinetics of the traps and attributed to the emission of carriers during the capture process. Trap concentrations were found high at the interface from depth profiling DLTS. Based on the available literature, it is suggested that these traps are related to FeGa, Fe-related centers, and complexes with hydrogen or shallow donors and might be affected or generated during the metallization by the E-beam evaporator and the CMP polishing.

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al 2 O 3 /GaN MOS Device

Distribution of Deep-Level Traps at Atomic-Layer-deposited Al2O3/n-GaN Interface

Influence of Deep-Level Traps on the Breakdown Characteristics of AlGaN/GaN High Electron Mobility Transistors

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

Impact of Interface Traps on Switching Behavior of Normally‐off AlGaN/GaN MOS‐HEMTs

Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

Interface/Border Trap Characterization Of Al2o3/Aln/Gan Metal-Oxide-Semiconductor Structures With An Aln Interfacial Layer

Spatial Identification Of Traps In Algan/Gan Heterostructures By The Combination Of Lateral And Vertical Electrical Stress Measurements

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

An Electric-Opto Combined Measurement Method for Identifying Filled Traps in the Off-State of HEMTs with High Spatial Resolution

Study on the Charging Current of Surface Traps in AlGaN/GaN High Electron Mobility Transistors with a Slot Gate Structure

Static Surface States and Bulk Traps in AlGaN/GaN HEMT Including Hot Electron and Quantum Effects

Investigation of Traps at MoS2/Al2O3Interface in Nmosfets by Low-Frequency Noise

Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx As Gate Dielectric

Investigation of Traps in HVPE Grown β-Ga2O3 Epilayers/n+-Ga2O3 using Deep Level Transient Spectroscopy

A Novel Insight on Interface Traps Density (Dit) Extraction in GaN-on-Si MOS-c HEMTs

An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps

Toward Reliable Extraction of the Properties of Border Traps in Lateral GaN Power MOSFET with a Distributed Network Model