Abstract:Molybdenum disulfide (MoS2) transistors are a promising alternative for the semiconductor industry due to their large on/off current ratio (>1010), immunity to short-channel effects, and unique switching characteristics. MoS2 has drawn considerable interest due to its intriguing electrical, optical, sensing, and catalytic properties. Monolayer MoS2 is a semiconducting material with a direct band gap of ~1.9 eV, which can be tuned. Commercially, the aim of synthesizing a novel material is to grow high-quality samples over a large area and at a low cost. Although chemical vapor deposition (CVD) growth techniques are associated with a low-cost pathway and large-area material growth, a drawback concerns meeting the high crystalline quality required for nanoelectronic and optoelectronic applications. This research presents a lower-temperature CVD for the repeatable synthesis of large-size mono- or few-layer MoS2 using the direct vapor phase sulfurization of MoO3. The samples grown on Si/SiO2 substrates demonstrate a uniform single-crystalline quality in Raman spectroscopy, photoluminescence (PL), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning transmission electron microscopy. These characterization techniques were targeted to confirm the uniform thickness, stoichiometry, and lattice spacing of the MoS2 layers. The MoS2 crystals were deposited over the entire surface of the sample substrate. With a detailed discussion of the CVD setup and an explanation of the process parameters that influence nucleation and growth, this work opens a new platform for the repeatable synthesis of highly crystalline mono- or few-layer MoS2 suitable for optoelectronic application.

Two‐Dimensional Semiconductors Grown by Chemical Vapor Transport

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS<sub>2</sub> with Tunable Electronic Properties

Space-confined CVD Growth of 2D-Mos2 Crystals with Tunable Dimensionality Via Adjusting Growth Conditions

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Wafer-Scale and Deterministic Patterned Growth of Monolayer MoS2 via Vapor-Liquid-Solid Method

Controlled Synthesis of Two-Dimensional 1T-Tise2 with Charge Density Wave Transition by Chemical Vapor Transport.

Monolayer MoS<sub>2</sub> of high mobility grown on SiO<sub>2</sub> substrate by two-step chemical vapor deposition

Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition

Synthesis of Two-Dimensional Transition Metal Dichalcogenides with Chemical Vapor Deposition

Chemical Vapor Deposition: A Potential Tool for Wafer Scale Growth of Two-Dimensional Layered Materials

Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality

Growth of wafer-scale MoS2 monolayer by magnetron sputtering.

Controllable Water Vapor Assisted Chemical Vapor Transport Synthesis of WS2-MoS2 Heterostructure

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Synthesis of High Quality Two-Dimensional Materials Via Chemical Vapor Deposition

12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture

Seeded Growth Of High-Quality Transition Metal Dichalcogenide Single Crystals Via Chemical Vapor Transport

Application-Oriented Growth of a Molybdenum Disulfide (MoS2) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition

Highly Crystalline ReSe2 Atomic Layers Synthesized by Chemical Vapor Transport

Synthesis and optical properties of large-scale single-crystalline two-dimensional semiconductor WS2 monolayer from chemical vapor deposition

Chemical vapor deposition growth and transport properties of MoS2–2H thin layers using molybdenum and sulfur as precursors