Abstract:Exploring highly efficient catalysts that utilize visible light for water-splitting shows immense potential in addressing energy and environmental challenges. However, most photocatalysts are faced with challenges such as low carrier migration ability, high carrier recombination rate, and insufficient driving force for water-splitting reactions. Here, based on the two-dimensional (2D) AgBiP2X6 (X = S, Se, Te) structures, we construct Janus AgBiP2X3X 3 ′ (X, X ′ = S, Se, Te) monolayers and theoretically investigate their photocatalytic performance. The results indicate that the Janus method effectively regulate the energy band structure and intrinsic electric field (EF) of the materials. The Janus AgBiP2S3Te3 structure possesses an optimal band gap and band edge position in comparison to AgBiP2X6. Among all the investigated materials, AgBiP2S3Te3 possesses the largest intrinsic EF. The vertical intrinsic EF in Janus AgBiP2S3Te3 facilitates spatial separation of photogenerated electrons and holes, allowing hydrogen evolution reaction (HER) to take place on its top surface and oxygen evolution reaction (OER) to occur on its bottom surface, thereby effectively preventing carrier recombination. The limiting potentials for OER and HER reactions are significantly reduced. The OER can proceeds spontaneously under neutral conditions. The Gibbs free energy change ( Δ G ) of the HER is 0.075 eV under acidic conditions at pH = 0, which closely approaches the optimal value of 0. Simultaneously, the Janus AgBiP2S3Te3 exhibits kinetic and thermal stability, suitable appfavorableropriate electron and hole mobility, and excellent visible light absorption capability. Our work not only predict a series of new 2D materials, but also paves a strategy for improving the photocatalytic properties of 2D ferroelectric materials.

Monolayer AgBiP2Se6: an atomically thin ferroelectric semiconductor with out-plane polarization.

The GaPS<sub>2</sub>Se<sub>2</sub> monolayer: a novel stable 2D Janus semiconductor with anisotropic properties for spontaneous water splitting under the irradiation of solar light

Two-dimensional Janus AgBiP2X3X 3 ′ (X, X ′ = S, Se, Te): Efficient intrinsic electric field regulatory strategy for photocatalytic overall water-splitting

Symmetry-breaking-induced Ferroelectric HfSnX3 Monolayers and Their Tunable Janus Structures: Promising Candidates for Photocatalysts and Nanoelectronics.

The Unprecedented Highest‐Layer‐Number Ferroelectric Semiconductor of 2D Homologous Single‐Phase Perovskites Tailored by Regulating Thickness of Inorganic Frameworks

Epitaxial Bi2 FeCrO6 Multiferroic Thin Film as a New Visible Light Absorbing Photocathode Material.

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Mechano-ferroelectric coupling: stabilization enhancement and polarization switching in bent AgBiP2Se6 monolayers

Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Bi3O2.5Se2: a two-dimensional high-mobility polar semiconductor with large interlayer and interfacial charge transfer

Two-Dimensional Ferroelectric C2N/In2Se3 Heterobilayer with Tunable Electronic Property and Photovoltaic Effect

Intercorrelated Ferroelectricity and Bulk Photovoltaic Effect in Two-Dimensional Sn2P2S6 Semiconductor for Polarization-Sensitive Photodetection.

Engineering Ferroelectric-Nanonet-based Heterostructures Enables Superior Photovoltaic Effect and Asymmetric Switchability

Two-dimensional pentagonal material Penta-PdPSe: A first-principle study

The Robust Ferroelectric and Electrical Response in 2D Bi2O2Se Semiconductor

Giant Ferroelectric Polarization in Ultrathin Ferroelectrics Via Boundary-Condition Engineering

2D XBiSe3(X = As, Sb) monolayers with high anisotropic mobility and enhanced optical absorption in visible light region

Physical Properties and Photovoltaic Application of Semiconducting Pd2Se3 Monolayer

Single-Layer BI: A Multifunctional Semiconductor with Ferroelectricity, Ultrahigh Carrier Mobility, and Negative Poisson’s Ratio

Enhancing Visible Light Absorption for Ferroelectric Sn2P2S6 by Se Anion Substitution

Picometer‐Level In Situ Manipulation of Ferroelectric Polarization in Van der Waals layered InSe