Abstract:Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001)GaN∥(0001)sapphire and (101[combining macron]0)GaN∥(112[combining macron]0)sapphire. Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

Growth of GaN micro/nanolaser arrays by chemical vapor deposition.

Growth of GaN Micro/nanolaser Arrays by Chemical Vapor Deposition

Molecular Beam Epitaxial Growth and Characterization of Al(Ga)N Nanowire Deep Ultraviolet Light Emitting Diodes and Lasers

Ultraviolet Lasing Using Individual GaN Nanobelts

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

The Effect of Lateral Growth of Self-Assembled GaN Microdisks on UV Lasing Action

Single gallium nitride nanowire lasers

Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates

A 326 nm pure ultraviolet light sources achieved in a Ga 2 O 3 microwire heterojunction through interface optimization and surface-modification

Photoluminescence and lasing characteristics of single nonpolar GaN microwires

An electrically-pumped WGM microlaser realized in an n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double-heterojunction device

Electrically-pumped WGM microlaser realized in n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double heterojunction device

Fabrication and Photoluminescence of Ordered GaN Nanowire Arrays

Centimeter-long III-Nitride nanowires and continuous-wave pumped lasing enabled by graphically epitaxial lift-off

Alignment Control and Atomically-Scaled Heteroepitaxial Interface Study of GaN Nanowires.

Room-temperature lasing action in GaN quantum wells in the infrared 1.5 micron region

Ultraviolet Random Laser Based on a Single GaN Microwire

A practical route towards fabricating GaN nanowire arrays

Homoepitaxial growth of high-quality GaN nanoarrays for enhanced UV luminescence

Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240–270 nm Spectral Range