Abstract:The achievement of electrically-pumped laser diodes at the micro/nanoscale levels is anticipated to feature an indispensable role in future photonic integrated circuits. However, the conventional p–n junction device architectures are inefficient due to serious optical and electrical losses. Herein, an electrically-injected whispering-gallery-mode (WGM) microlaser diode, which contained an n-AlGaN electron-injection layer, a ZnO microwire doped with a Ga impurity (ZnO:Ga MW), a Pt nanolayer, a MgO nanolayer and a p-GaN substrate as a hole supplier, was fabricated and systematically investigated. In practice, upon continuous-wave operation of electrical pumping at ambient temperature, the well-designed n-AlGaN/n-ZnO:Ga MW/Pt/MgO/p-GaN device exhibits remarkable double-heterojunction (n–n–p) characteristics, enabling lasing in the ultraviolet spectral region, accompanied by efficient suppression of spontaneous radiation. Furthermore, the device exhibits fascinating properties, with a threshold as low as 12.5 mA and a high quality ( Q )-factor of approximately 1943. The carefully-designed double heterostructure enables superinjection of current, as well as efficient confinement of injected carriers and photons. In this case, the electron–hole recombination, light-emission/lasing region, and population-inversion zones coincide, and are mainly concentrated in the ZnO:Ga MW active region, thereby achieving the required population inversion at relatively low current-injection levels. Such a methodical design and construction of a double-heterojunction microlaser device could bring new technological opportunities to realize high-performance lasers with a low threshold, high Q -factor, distinct multiple modes, and efficient suppression of spontaneous radiation driven by electrical current.

Molecular Beam Epitaxial Growth and Characterization of Al(Ga)N Nanowire Deep Ultraviolet Light Emitting Diodes and Lasers

An Electrically Injected Algan Nanowire Laser Operating In The Ultraviolet-C Band

Iii-Nitride Deep Ultraviolet Micro- and Nano-Photonics

High Efficiency Ultraviolet Emission from AlxGa1−xN Core-Shell Nanowire Heterostructures Grown on Si (111) by Molecular Beam Epitaxy

The Person and the Partner: Individual Differences Moderate the Relationship Between Partner Feedback and Condom Use

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED

Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources

Subgrid modeling for reacting large eddy simulations

AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template

Efficient Deep Ultraviolet Emission from Self-Organized AlGaN Quantum Wire Array Grown on Ultrathin Step-bunched AlN Templates

An electrically-pumped WGM microlaser realized in an n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double-heterojunction device

Semiconductor Nanowire Light Emitting Diodes Grown on Metal: A Direction towards Large Scale Fabrication of Nanowire Devices

B-50/GAP-43 mRNA expression in cultured primary Schwann cells is regulated by cyclic AMP.

Single gallium nitride nanowire lasers

A 326 nm pure ultraviolet light sources achieved in a Ga 2 O 3 microwire heterojunction through interface optimization and surface-modification

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p -AlGaN Electron Blocking Layers

Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

Electrically-pumped WGM microlaser realized in n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double heterojunction device