Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films
Yanxia Lin,Shibo Liang,Lin Xu,Lijun Liu,Qianlan Hu,Chenwei Fan,Yifan Liu,Jie Han,Zhiyong Zhang,Lian‐Mao Peng
DOI: https://doi.org/10.1002/adfm.202104539
IF: 19
2021-08-27
Advanced Functional Materials
Abstract:Aligned carbon nanotube (A-CNT) films are expected to be an ideal channel material for constructing field-effect transistors (FETs) that outperform conventional transistors, and multiple methods are developed to fabricate A-CNT films with high semiconducting purity, good alignment, and high density. However, the reported A-CNTs-based FETs are almost all depletion-mode FETs and suffer from poor subthreshold swing (SS). In this study, enhancement-mode (E-mode) FETs based on A-CNT films are fabricated by systematically optimizing the channel material and CNT/high-k/metal gate stack. The carrier mobility in top-gate A-CNT FETs reaches a maximum value of 1850 cm2 V−1 s−1, which is near that of chemical-vapor deposition grown individual CNTs and sets a record among A-CNT films. The fabricated 200 nm-gate length p-type A-CNT FETs present a SS of 73 mV dec−1, the transconductance of 1 mS µm−1, and an on-current of 1.18 mA µm−1 at a bias of -1 V, indicating a real performance exceeding that of commercial Si-based transistors at a similar gate length. Based on the high-performance and uniform E-mode FETs, ring oscillators with stage numbers 5, 7, 9, and 11 are fabricated with an optimized design and high yield, exhibiting a record propagation gate delay of 11.3 ps among CNT- and other nanomaterial-based ICs.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology