Over 800% Efficiency Enhancement Of All-Inorganic Quantum-Dot Light Emitting Diodes With An Ultrathin Alumina Passivating Layer

Wenyu Ji,Huaibin Shen,Han Zhang,Zhihui Kang,Hanzhuang Zhang
DOI: https://doi.org/10.1039/c8nr01460d
IF: 6.7
2018-01-01
Nanoscale
Abstract:The use of robust, inorganic charge-transport materials is always desired in quantum-dot light emitting diodes (QLEDs) because they are expected to allow higher stability and lower cost than their organic counterparts. We achieve here an all-inorganic QLED with excellent efficiency by modifying the solution-processed NiO (s-NiO) surface with an ultrathin Al2O3 passivating layer. Both transient resolution photoluminescence and X-ray photoelectron spectroscopy measurements demonstrate that the Al2O3 layer can effectively passivate NiOOH on the s-NiO surface, thereby suppressing exciton quenching. This improves the highest efficiency of the QLED without an Al2O3 layer by over 800% to a current efficiency (external quantum efficiency) of 34.1 cd A(-1) (8.1%), making it the best-performing all-inorganic QLED.
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