Abstract:[Formula: see text] and [Formula: see text] are well-known layered bulk structures with weak van der Waals interactions. In this work we explore the atomic lattice, dynamical stability, electronic and optical properties of [Formula: see text], [Formula: see text] and [Formula: see text] monolayers using the density functional theory simulations. Molecular dynamics and phonon dispersion results show the desirable thermal and dynamical stability of studied nanosheets. On the basis of HSE06 and PBE/GGA functionals, we show that all the considered novel monolayers are semiconductors. Using the HSE06 functional the electronic bandgap of [Formula: see text], [Formula: see text] and [Formula: see text] monolayers are predicted to be 2.15, 1.35 and 1.37 eV, respectively. Optical simulations show that the first absorption coefficient peak for [Formula: see text], [Formula: see text] and [Formula: see text] monolayers along in-plane polarization is suitable for the absorption of the visible and IR range of light. Interestingly, optically anisotropic character along planar directions can be desirable for polarization-sensitive photodetectors. Furthermore, we systematically investigate the electrical transport properties with combined first-principles and Boltzmann transport theory calculations. At optimal doping concentration, we found the considerable larger power factor values of 2.69, 4.91, and 5.45 for hole-doped [Formula: see text], [Formula: see text], and [Formula: see text], respectively. This study highlights the bright prospect for the application of [Formula: see text], [Formula: see text] and [Formula: see text] nanosheets in novel electronic, optical and energy conversion systems.

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Tunable Half-Metallicity and Edge Magnetism of H-saturated InSe Nanoribbons

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Intrinsic Ferromagnetic Semiconductors in Two-Dimensional Alkali-Based Chromium Chalcogenides

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Energy Barrier at Indium/Indium Selenide Nanosheet Interfaces: Implications of Metal-to-Insulator Transition for Field-Effect Transistor Modeling

Planar Direction‐Dependent Interfacial Properties in Monolayer In2Se3–Metal Contacts

Half-metallic Ferromagnetic Properties of Mn-doped MoSe2 and Its Heterostructure

Van der Waals stacking of multilayer In2Se3 with 2D metals induces transition from Schottky to Ohmic contact

Above room-temperature two-dimensional ferromagnetic half-metals in Mn-based Janus magnets

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