Manipulation of Ionized Impurity Scattering for Achieving High Thermoelectric Performance in N-Type Mg3Sb2-based Materials.

Jun Mao,Jing Shuai,Shaowei Song,Yixuan Wu,Rebecca Dally,Jiawei Zhou,Zihang Liu,Jifeng Sun,Qinyong Zhang,Clarina dela Cruz,Stephen Wilson,Yanzhong Pei,David J. Singh,Gang Chen,Ching-Wu Chu,Zhifeng Ren

DOI: https://doi.org/10.1073/pnas.1711725114

IF: 11.1

2017-01-01

Proceedings of the National Academy of Sciences

Abstract:Significance Higher carrier mobility can contribute to a larger power factor, so it is important to identify effective means for achieving higher carrier mobility. Since carrier mobility is governed by the band structure and the carrier scattering mechanism, its possible enhancement could be obtained by manipulating either or both of these. Here, we report a substantial enhancement in carrier mobility by tuning the carrier scattering mechanism in n-type Mg 3 Sb 2 -based materials. The ionized impurity scattering in these materials has been shifted into mixed scattering by acoustic phonons and ionized impurities. Our results clearly demonstrate that the strategy of tuning the carrier scattering mechanism is quite effective for improving the mobility and should also be applicable to other material systems.