Abstract:Tin selenide (SnSe) and tin sulfide (SnS) have recently attracted particular interest due to their great potential for large-scale thermoelectric applications. A complete prediction of the thermoelectric performance and the understanding of underlying heat and charge transport details are the key to further improvement of their thermoelectric efficiency. We conduct comprehensive investigations of both thermal and electrical transport properties of SnSe and SnS using first-principles calculations combined with the Boltzmann transport theory. Due to the distinct layered lattice structure, SnSe and SnS exhibit similarly anisotropic thermal and electrical behaviors. The cross-plane lattice thermal conductivity κL is 40–60% lower than the in-plane values. Extremely low κL is found for both materials because of high anharmonicity, while the average κL of SnS is ∼8% higher than that of SnSe from 300 to 750 K. It is suggested that nanostructuring would be difficult to further decrease κL because of the short mean free paths of dominant phonon modes (1–30 nm at 300 K), while alloying would be efficient in reducing κL considering that the relative κL contribution (∼65%) of optical phonons is remarkably large. On the electrical side, the anisotropic electrical conductivities are mainly due to the different effective masses of holes and electrons along the a, b, and c axes. This leads to the highest optimal ZT values along the b axis and lowest ones along the a axis in both p-type materials. However, the n-type ones exhibit the highest ZTs along the a axis due to the enhancement of power factor when the chemical potential gradually approaches the secondary conduction band valley that causes significant increase in electron mobility and density of states. Owing to the larger mobility and smaller κL along the given direction, SnSe exhibits larger optimal ZTs compared with SnS in both p- and n-type materials. For both materials, the peak ZTs of n-type materials are much higher than those of p-type ones along the same direction. The predicted highest ZT values at 750 K are 1.0 in SnSe and 0.6 in SnS along the b axis for the p-type doping, while those for the n-type doping reach 2.7 in SnSe and 1.5 in SnS along the a axis, rendering them among the best bulk thermoelectric materials for large-scale applications. Our calculations show reasonable agreements with the experimental results and quantitatively predict the great potential in further enhancing the thermoelectric performance of SnSe and SnS, especially for the n-type materials.

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Enhancement of Thermoelectric Performance of Layered SnSe2 by Synergistic Modulation of Carrier Concentration and Suppression of Lattice Thermal Conductivity

Realizing High In-plane Carrier Mobility in N-type SnSe Crystals through Deformation Potential Modification

Enhanced Thermoelectric Performance in Li Doped SnS Via Carrier Concentration Optimization

Modulating structures to decouple thermoelectric transports leads to high performance in polycrystalline SnSe

Resolving Different Scattering Effects on the Thermal and Electrical Transport in Doped SnSe

High Carrier Mobility Promotes In‐Plane Thermoelectric Performance of N‐type PbSnS2 Crystals

Manipulation of Ionized Impurity Scattering for Achieving High Thermoelectric Performance in N-Type Mg3Sb2-based Materials.

First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS

Synergistically optimizing carrier and phonon transport properties in n-type PbTe through I doping and SnSe alloying

Highly Textured N-Type SnSe Polycrystals with Enhanced Thermoelectric Performance.

MXene as charge reservoir promotes the thermoelectric performance of layered metal selenide SnSe2

Enhancing thermoelectric performance of BiSbSe3 through improving carrier mobility via percolating carrier transports

Balancing electron and phonon scatterings while tailoring carrier concentration in SnTe for enhancing thermoelectric performance

Estimation of the potential performance in p-type SnSe crystals through evaluating weighted mobility and effective mass

Thermoelectric Performance Enhancement in SnS Polycrystals Owing to Hole Doping Combined with Textured Microstructures

Improved thermoelectric properties of n-type polycrystalline SnSe via carrier concentration optimization

3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals

3D charge and 2D phonon transports leading to high out-of-plane <i>ZT</i> in n-type SnSe crystals

Modulating Electrical Transport Properties of SnSe Crystal to Improve the Thermoelectric Power Factor by Adjusting Growth Method

Microscopic origin of the excellent thermoelectric performance in n-doped SnSe