Abstract:The sharpness of the interface between two semiconductors InAs and GaSb is crucial for the observation of a quantized Hall effect. Intermixing between the two materials at such an interface leads to a trapped two‐dimensional hole gas which suppresses Hall quantization and contributes an additional electrical conduction channel. The interface of common III‐V semiconductors InAs and GaSb can be utilized to realize a two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can yield Hall quantization from coexisting electrons and holes. This anomaly is a determining factor in the fundamental origin of the topological state in InAs/GaSb. Here, the coexistence of electrons and holes in InAs/GaSb is tied to the chemical sharpness of the interface. Magnetotransport, in samples of Mn‐doped InAs/GaSb cleaved from wafers grown at a spatially inhomogeneous substrate temperature, is studied. It is reported that the observation of quantum oscillations and a quantized Hall effect whose behavior, exhibiting coexisting electrons and holes, is tuned by this spatial nonuniformity. Through transmission electron microscopy measurements, it is additionally found that samples that host this co‐existence exhibit a chemical intermixing between group III and group V atoms that extends over a larger thickness about the interface. The issue of intermixing at the interface is systematically overlooked in electronic transport studies of topological InAs/GaSb. These findings address this gap in knowledge and shed important light on the origin of the anomalous behavior of quantum oscillations seen in this 2D topological insulator.

Decoupling Edge Versus Bulk Conductance in the Trivial Regime of Aninas/gasbdouble Quantum Well Using Corbino Ring Geometry

Edge Transport in the Trivial Phase of Inas/Gasb

Observation Of Edge Transport In The Disordered Regime Of Topologically Insulating Inas/Gasb Quantum Wells

Noise Processes in InAs/Ga(In)Sb Corbino Structures

Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells.

Quantized Conductance and Large G-Factor Anisotropy in InSb Quantum Point Contacts.

Edge and bulk states in Weyl-orbit quantum Hall effect as studied by Corbino measurements

Robust Helical Edge Transport in GatedInAs/GaSbBilayers

Helical conducting edge states in narrow-gap semiconductors without band inversion

Edge Mode of Inas/Gasb Quantum Spin Hall Insulator in Magnetic Field

Images Of Edge Current In Inas/Gasb Quantum Wells

Corroborating the Bulk-Edge Correspondence in Weakly Interacting One-Dimensional Topological Insulators

Quantum Spin Hall Effect in Inverted InAs/GaSb Quantum Wells

Anomalous Conductance Oscillations in the Hybridization Gap of InAs/GaSb Quantum Wells

H/e Superconducting Quantum Interference Through Trivial Edge States in InAs.

Magneto-Induced Topological Phase Transition in Inverted InAs/GaSb Bilayers

Interface Dependent Coexistence of Two‐Dimensional Electron and Hole Gases in Mn‐doped InAs/GaSb

Finite Conductivity in Mesoscopic Hall Bars of Inverted InAs/GaSb Quantum Wells

Electrically Tuning Many-Body States In A Coulomb-Coupled Inas/Ingasb Double Layer

The bulk-edge correspondence for curved interfaces