Abstract:This paper reports an advanced deep reactive ion etching (DRIE) process for realizing ultra-deep (>500-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>) and ultra-high aspect-ratio (UHAR) silicon structures (AR > 40 for 1-mm through-trench etch, <inline-formula> <tex-math notation="LaTeX">$\text {AR}\approx 80$ </tex-math></inline-formula> for 500-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> through-trench etch, and AR > 20 for 500-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> through-hole etch), with straight sidewalls across a wide range of feature sizes. The challenges of making such structures are overcome by continuously ramping critical parameters of the Bosch DRIE process throughout the process, including the 380-kHz bias power during etch step, the etch/passivation step duration, and the chamber pressure. The masking material capable of enduring the long DRIE process is also discussed; 10-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> and 25-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> wide trenches are etched to a depth of >750-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> and >1000-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>, respectively, in 1-mm-thick silicon wafers with straight sidewall profiles and flat trench bottoms. Deeper trenches are expected to be etched beyond a 1-mm thick wafer with thicker and/or higher selectivity masking materials. We have also demonstrated etching of circular holes of diameters as small as 25-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> to a depth of >500-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>, and potentially with 10–15 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> diameter holes. This advanced DRIE process offers opportunities for applications ranging from through-silicon via in 3-D CMOS integration to emerging micro- and meso-scale microelectromechanical system applications that demand ultra-deep and UHAR DRIE. [2017–0298]

Profile control of a borosilicate-glass groove formed by deep reactive ion etching

Reactive ion beam etching for diffractive optical elements

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Ultra high aspect-ratio and thick deep silicon etching (UDRIE)

Trench Profile Control of Silicon DRIE Process on ICP Tools

Three step deep reactive ion etch for high density trench etching

Ultra Deep Reactive Ion Etching of High Aspect-Ratio and Thick Silicon Using a Ramped-Parameter Process

Methods to Protect Silicon Microstructures from the Damages in Deep Reactive Ion Etching

Cryogenic DRIE Processes for High-Precision Silicon Etching in MEMS Applications

Fabrication of ultra-high-aspect-ratio nano-walls and nano-structures on silicon substrates

3D Simulation of Profile Evolution in Silicon DRIE

Reactive ion Etching of SiO2 and Mo Sidewall Profile Process

A novel convex corner compensation for wet anisotropic etching on (100) silicon wafer

Dry etching of polydimethylsiloxane used for bio-microfluidic systems

Critical tasks in high aspect ratio silicon dry etching for microelectromechanical systems

Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio

Towards the Fabrication of High-Aspect-Ratio Silicon Gratings by Deep Reactive Ion Etching

Reduced etch lag and high aspect ratios by deep reactive ion etching (DRIE)

Wafer level bulk titanium ICP etching using SU8 as an etching mask

Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication

In-situ Measurement of Ion Angular Distribution in Bulk Titanium DRIE for Modeling the Etch Profile