Molecular Dynamics Calculation of Resist Deformation Behavior in Nanoimprint

li shize,wei zhengying,du jun,tang yiping,chu huali
DOI: https://doi.org/10.16865/j.cnki.1000-7555.2015.05.019
2015-01-01
Abstract:In order to improve the quality of nanoimprint replica,coarse-grained molecular dynamics simulation was conducted to study the resist deformation behavior in nanoimprint lithography. Calculation model includes a silicon mold with line width structures,amorphous PMMA film and silicon substrate. Periodic boundary condition was used in x and y direction and non-periodic condition was used in z direction. The effects of mold line width and temperature were considered in this paper. The needed imprint force,the change of the resist density and the deformation of polymer molecular chains were analyzed. The results show that the loading force decreases with increase of the temperature and mold line width. In the initial stage of holding and unloading processes,the force decreases rapidly in a step-like way. The local density of the resist increases during stamping process. The spring-back phenomenon appears during unmolding stage.
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