Abstract:Abstract The contradictory nature of increasing the crystallization speed while extending the amorphous stability for phase-change materials (PCMs) has long been the bottleneck in pursuing ultrafast yet persistent phase-change random-access memory. Scandium antimony telluride alloy (Sc x Sb 2 Te 3 ) represents a feasible route to resolve this issue, as it allows a subnanosecond SET speed but years of reliable retention of the RESET state. To achieve the best device performances, the optimal composition and its underlying working mechanism need to be unraveled. Here, by tuning the doping dose of Sc, we demonstrate that Sc 0.3 Sb 2 Te 3 has the fastest crystallization speed and fairly improved data nonvolatility. The simultaneous improvement in such ‘conflicting’ features stems from reconciling two dynamics factors. First, promoting heterogeneous nucleation at elevated temperatures requires a higher Sc dose to stabilize more precursors, which also helps suppress atomic diffusion near ambient temperatures to ensure a rather stable amorphous phase. Second, however, enlarging the kinetic contrast through a fragile-to-strong crossover in the supercooled liquid regime should require a moderate Sc content; otherwise, the atomic mobility for crystal growth at elevated temperatures will be considerably suppressed. Our work thus reveals the recipe by tailoring the crystallization kinetics to design superior PCMs for the development of high-performance phase-change working memory technology.

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Study of Er-Sb and Er-Te parental alloys used in phase change memory

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Sb-rich Zn–Sb–Te Phase-Change Materials: A Candidate for the Trade-off Between Crystallization Speed and Data Retention

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Recipe for ultrafast and persistent phase-change memory materials

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The Phase Change Memory Features High-Temperature Characteristic Based on Ge-Sb-Se-Te Alloys

Characteristics of Ga–Sb–Te Films for Phase-Change Memory