Effect of Bi4B2O9 Addition on the Sintering Temperature and Microwave Dielectric Properties of BaO–Nd2O3–4TiO2 Ceramics
Xingyu Chen,Weijun Zhang,Shuxin Bai
DOI: https://doi.org/10.1007/s10854-012-0716-7
2012-01-01
Journal of Materials Science Materials in Electronics
Abstract:The effects of Bi4B2O9 addition on the sintering temperature, phase transition and microwave dielectric properties of BaO–Nd2O3–4TiO2 (BNT) ceramics have been investigated. With 10 wt% Bi4B2O9 addition, the sintering temperature of the BNT ceramics can be lowered down to about 1,150 °C. The secondary phase was observed at the level of 15 wt% Bi4B2O9 addition. The Bi4B2O9 addition can significantly affects the microwave dielectric properties. The Q × f 0 value is a function of the sintering temperature and the Bi4B2O9 content. For the samples sintered at 1,150 °C, Q × f 0 value varies from 6,300 to 3,300 GHz as the Bi4B2O9 addition increases from 5 to 20 wt%. The addition of Bi4B2O9 does not induce much degradation in εr but modified the τf value to near zero. Typically, When 10 wt% Bi4B2O9 is added, the τf of the ceramics could be tuned to a near-zero value (~1.2 ppm/°C), a substantial εr (~86) and Q × f 0 (~4,670 GHz) could also be achieved simultaneously. The Bi4B2O9 is an efficient sintering additive to decrease the sintering temperature and tune the τf value of the microwave dielectric materials for the practical microwave applications.