Abstract:Many resistive switching memory devices are based on the formation of a small-area conducting filament (CF). Understanding the conduction and switching properties of the CFs is crucial for their industrial application. In this work we report electrical evidence of atomic-size effects in metal-insulator-metal structures showing memory switching. In particular, we report the observation of abrupt changes of the order of the quantum of conductance Go=2e 2/h during the RESET transition of Pt/HfO2/Pt structures. Statistical analysis of the CF conductance during the RESET experiments further confirm the appearance of preferred atomic-size configurations of the CF with a well-defined structure of conductance peaks of the order of Go. Based on these results, we suggest that the quantum of conductance represents a natural boundary between the ON and OFF resistive switching CF states. Temperature dependence of the conduction as a function of the CF conductance further supports this conclusion. Once again, our results emphasize the atomic-scale size of the CF constrictions and the need to use first-principle calculations and molecular dynamic simulations to understand key aspects related to performance and reliability. First-principle calculations performed in both crystalline and amorphous HfO2 confirm that one dimensional paths of oxygen vacancies can support quantum transport channels and might give rise to the experimental results. On the other extreme of the modeling hierarchy, a compact model for the CF conduction based on the quantum point contact concept is shown to provide good fitting of the CF conduction both in the ON and the OFF states, further supporting the quantum-wire picture. © 2012 IEEE.

Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM

Confirmation Of Filament Dissolution Behavior By Analyzing Electrical Field Effect During Reset Process In Oxide-Based Rram

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Ultrafast RESET Analysis of HfOx‐Based RRAM by Sub‐Nanosecond Pulses

Voltage and Power-Controlled Regimes in the Progressive Unipolar Reset Transition of Hfo2-Based Rram

Investigation on the RESET Switching Mechanism of Bipolar Cu/HfO2/Pt RRAM Devices with a Statistical Methodology

Study on ion dynamics of hafnium oxide RRAM by electrode thermal effect

Statistical Characteristics of Reset Switching in Cu/HfO2/Pt Resistive Switching Memory

An In-Depth Simulation Study of Thermal Reset Transitions in Resistive Switching Memories

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device.

A nanoscale study of hafnium oxide resistive memory switching dynamics

Electrical evidence of atomic-size effects in the conduction filament of RRAM

Compliance Current Effect on Switching Behavior of Hafnium Oxide Based RRAM

Analysis of the Voltage–Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching

Reset Instability in $\hbox{Cu}/\hbox{ZrO}_{2}$ :Cu/Pt RRAM Device

Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices

Impact of program/erase operation on the performances of oxide-based resistive switching memory.

Study of redox reactions in resistive switching processes of AlO x /WO y based bilayer RRAM

Experimental evidence for a quantum wire state in HfO2-based VCM-RRAM

Justification and Monte Carlo Simulation of Microstructure Evolution Process of Conductive Filament in Reset Transition in Cu/Hfo2/Pt Rram

A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory