Abstract:Single-crystal SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. An ultrasmooth surface with atomic surface roughness that is scratch free and subsurface damage (SSD) free is indispensable before its application. As the last process to reduce the surface roughness and remove surface defects, precision polishing of single-crystal SiC is essential. In this paper, precision polishing technologies for 4H-SiC and 6H-SiC, which are the most commonly used polytypes of single-crystal SiC, such as chemical mechanical polishing (CMP), photocatalytic chemical mechanical polishing (PCMP), plasma-assisted polishing (PAP), electrochemical mechanical polishing (ECMP), and catalyst-referred etching (CARE), were reviewed and compared with emphasis on the experimental setup, polishing mechanism, material removal rate (MRR), and surface roughness. An atomically smooth surface without SSD can be obtained by CMP, PCMP, PAP, and CARE for single-crystal SiC. However, their MRRs are meager, and the waste treatment after CMP is difficult and expensive. Moreover, PAP’s operation is poor due to the complex polishing system, plasma generation, and irradiation devices. A high MRR can be achieved by ECMP. In addition, it is an environmentally friendly precision polishing process for single-crystal SiC since the neutral salt solution is generally used as the electrolyte in ECMP. However, the formation of the egglike protrusions at the oxide/SiC interface during anodic oxidation would lead to a bigger surface roughness after ECMP than that after PAP is processed. The HF solution used in CARE was toxic, and Pt was particularly expensive. Ultrasonic vibration-assisted single-crystal SiC polishing and electrolyte plasma polishing (EPP) were discussed; furthermore, the research direction of further improving the surface quality and MRR of single-crystal SiC was prospected.

Influence of SiC Surface Defects on Materials Removal in Atmospheric Pressure Plasma Polishing

Removal Function and Chemical Composition of RS-SiC Surface Processing by Atmospheric Pressure Plasma Processing

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

A Review on Precision Polishing Technology of Single-Crystal SiC

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Wear mechanism in nano polishing of SiCp/Al composite materials using molecular dynamics

Molecular dynamics study of the removal mechanism of SiC in a fixed abrasive polishing in water lubrication

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

An experimental investigation of scan trajectory into the underwater femtosecond laser polishing SiC ceramic

Impact of multiple abrasive particles on surface properties of SiC: A molecular dynamics simulation study

Picosecond Laser-Assisted Chemical Mechanical Polishing (CMP): Aiming at the Si-Face of Single-Crystal 6H-Sic Wafer

Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate

Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face

Study on the formation mechanism of surface defects in the processing of large particle SiCp/Al composites

Plasma assisted remediation of SiC surfaces

Surface and subsurface cracks characteristics of single crystal SiC wafer in surface machining

Material Removal Mechanism of SiC Ceramic by Porous Diamond Grinding Wheel Using Discrete Element Simulation

Removal mechanism on 4H–SiC single crystal by picosecond laser ablation-assisted chemical mechanical polishing (CMP)

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

Influence of Pulse Energy and Defocus Amount on the Mechanism and Surface Characteristics of Femtosecond Laser Polishing of SiC Ceramics